Piletid vastustega
may be tens of square centimeters.
In the case of power diode, the additional n- layer exists between these two layers, which is
termed as a drift region. This layer can be quitewide for the diode. The wide lightly doped
region adds significant ohmic resistance to the forward-biased diode and causes larger power
dissipation in the diode when it is conducting current.
Most of the power dissipation in a diode occurs in the forward-biased on-state operation. Real
poeration currents and voltages of power diodes are essentially restricted with power losses
and the thermal effect of power dissipation. Therefore, in power devices cooling is very
important.
In the case of reverse biased voltage, only the small leakage current flows through the diode.
This current is independent of the reverse voltage until the breakdown voltage is reached.
After that, the diode voltage remains essentially constant while the current increases
dramatically
annaabi.ee 
