"approximatly" - 1 õppematerjal

Piletid vastustega

The reverse current is a leakage current at the source rated voltage. Typically, silicon diodes have 1-10 microA and germanium 200-700 microA of leakage current. This value includes thermally produced current and surface leakage current. Only these currents take place, when a diode is reverse biased. At breakdown, the diode goes into avalanche where a number of carriers appear suddenly in the depletion layer. With a rectifier diode, breakdown is usually destructive. 4)Typical values: Uknee- approximatly 0.7V; UF ­ 0.7-2.0V; leakage (IR) ­ 1-10 microA/200- 700microA. 5) Idealized characteristic. In view of a very small leakage current in the reverse- bias state and a small voltage drop in the forward-bias state as compared to the operating voltages and currents of a circuit in which the diode is used, the oputput characteristic of the diode can be idealized as shown in the figure. This corner can be used for analyzing the circuit