Piletid vastustega
saturation;b)switching of positive and negative voltages and conducting of positive and
negative currents with equal ease;c)simple protection circuits;d)simple voltage
control;e)normally off device if the enhancement-mode MOSFET is used;f)positive
temperature coefficient makes it easy to be applied for parallel devices for increased current-
handling capability.Disadvantages:a)relatively low power handling capabilities(less than
10kVA, 1000V, and 200A);power losses are proportional to the square of current
value.b)relatively high(more than 2V) forward voltage drop, which results in higher losses
than BJT.
7)ID(max)=2-50A;UDS=60-500V,UG(max)=+/- 20V
8)Power enhancement-mode MOSFET.The structure of a semiconductor is composed of
many thousands of cells connected in parallel to achieve a large gain and low on-state
resistance.Overall, the input curve of a power MOSFET is quite linear compared with the
annaabi.ee 
