Filters - Harjutus 2 (1)

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Diode circuits - Harjutus 3

Tallinn University of Technology Department of Electrical Drives and Power Electronics Report on Exercises 3 on Electronics and Semiconductor Engineering Diode circuits Student AAVB-41 Tallinn 2008 Exercise 3.1. Diode characteristics Fig. 3.1. Circuit diagram Timing diagram Output characteristic (forward bias only) Forward Bias Reverse Bias Umax, V UAC, Vrms Measured Calculated IA, Arms IA, Arms 0,5 0,35 0,006 0 1 0,64 0,1 0 2 1,05 4,71 4 4 1,84

Elektroonika jõupooljuht tehnika

3

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Linear Circuits - Harjutus 1

Tallinn University of Technology Department of Electrical Drives and Power Electronics Report on Exercises 1 on Electronics and Semiconductor Engineering Linear Circuits Student AAVB-41 Tallinn 2008 Exercise 1.1. RL circuit Quantity Calculated Experimental value value Umax, V 14,14 14,14 I, mA 983 983 UR, V 9,82 9,81 UL, V 1,85 1,85 -10,7 -10,6 -2,0 -1,7 -0,15 -0,15 Comparative data table Conclusion Calculated and experimental results are very similar. Maximum distinction does not ex

Elektroonika jõupooljuht tehnika

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Filters report 5 Electronics and Semiconductor Engineering

Tallinn University of Technology Department of Electrical Engineering Filters Report on Exercise 5 in AAR3320 Electronics and Semiconductor Engineering Student: Student Code: Study Group: Instructor: Prof. Valery Vodovozov Tallinn 1. RC filter R

Elektrimaterjald

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Electronics and semiconductor engineering exercise 1

Tallinn University of Technology Department of Electrical Engineering ELECTRONICS AND SEMICONDUCTOR ENGINEERING Exercises Linear circuits Student: xxxxxxxx Code: xxxxxx Group: xxxxxx TALLINN xxxx 1.1 RL-Circuit L1 100mH Uout=4V V1 232.5 Vrms R1 5kHz 54 -89° Figure .1: RL-circuit Figure 1.: Input and load voltage Figure 1.: Frequency response Fig

Energiaarvutus

8

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Single-Phase Full-Wave Rectifiers

Tallinn University of Technology Department of Electricl Power Engineering and Mechatronics Report on Exercises 2 on Power Electronics Single-Phase Full-Wave Rectifiers Tallinn 2017 Given parameters: Output voltage, Ud = 10 V Input frequency, fin = 50 Hz Load resistance, Rload = 70 kOhm Calculations: u1 10 I d= = =0.143 mA R L 70000 πUd 3.14∗10 US= = =11.1 V 2 √2 2 √2 U Smax =U S∗√ 2=11.1∗√ 2=15.7 V PIV =2∗U smax =2∗15.7=31.4 V I max=I d∗√ 2=0.143∗√ 2=0.2 V Table 1. Value comparison table. Parameter Calculated Measured Error Ud, V 10 9.6 0.3 Id, mA 0.143 0.137 0.006 Usmax, V 15

Inglise keel

12

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AC Voltage Regulators

Tallinn University of Technology Department of Electricl Power Engineering and Mechatronics Report on Exercises 4 on Power Electronics AC Voltage Regulators Tallinn 2017 Given parameters: Output voltage, Ud = 20 V Input frequency, fin = 50 Hz Load resistance, Rload = 70 kOhm Calculations: U ¿ =2∗U out =2∗20=40V U max U rms = =17.09 V √2 Period = pulse width + delay => 10 ms = 5 ms + 5 ms Table 1. Control curve data. Delay time, Pulse with, Alpha, firing Switch SCR ms ms angle Uout, V Iout, mA Uout, V Iout, mA 0 10 0 28.14 0.52 21.28 0.25 2

Inglise keel

8

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Three-Phase Rectifiers

Tallinn University of Technology Department of Electricl Power Engineering and Mechatronics Report on Exercises 3 on Power Electronics Three-Phase Rectifiers Tallinn 2017 Given parameters: Output voltage, Ud = 10 V Input frequency, fin = 50 Hz Load resistance, Rload = 70 kOhm Calculations: M3 rectifier: u1 10 I d= = =0.143 mA R L 70000 2π Ud 2 π∗10 U ¿max = = =12.09 V 3 √3 3 √3 U ¿ max 12.09 U ¿rms = = =8.55V √2 √2 B6 rectifier: πUd π∗10 U ¿max = = =6.05 V 3 √3 3 √3 U ¿ max 6.05 U ¿rms = = =4.3

Inglise keel

2

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on Electronics and Semiconductor Engineering OP AMPS

Tallinn University of Technology Department of Electrical Drives and Power Electronics Report on Electronics and Semiconductor Engineering OP AMPS Student AAAB-41 Tallinn 2011 Exercise 5.1. Non.Inverting Voltage Amplifier  Fig . Circuit diagram Fig . Diagrams of bandwidth versus gain. Data table Measur Calculated ed Uin R1, k R2, k KU Uout, V fc, kHz KU Uout, V fc, kHz 0,7 2 18,57 9,63 6,74 146 10,29 7,2 150 0,7

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